型号:

MT29F2G08ABAEAWP-IT:E

RoHS:无铅 / 符合
制造商:Micron Technology Inc描述:IC FLASH 2G 3.3V 2KBPG 48TSOP
详细参数
数值
产品分类 集成电路 (IC) >> 存储器
MT29F2G08ABAEAWP-IT:E PDF
标准包装 1,000
系列 -
格式 - 存储器 闪存
存储器类型 闪存 - NAND
存储容量 2G(256M x 8)
速度 -
接口 并联
电源电压 2.7 V ~ 3.6 V
工作温度 -40°C ~ 85°C
封装/外壳 48-TFSOP(0.724",18.40mm 宽)
供应商设备封装 48-TSOP I
包装 托盘
相关参数
EP4SE530H40C3ES Altera IC STRATIX IV E 530K 1517-HBGA
IDT7164S20YGI8 IDT, Integrated Device Technology Inc IC SRAM 64KBIT 20NS 28SOJ
EP4SE530H35C3NES Altera IC STRATIX IV E 530K 1152-HBGA
MX29GL256ELXFI-90Q Macronix IC FLASH MEM 256MB 90NS 64LFBGA
EP4SE530H35C3ES Altera IC STRATIX IV E 530K 1152-HBGA
EP4SE530F43C3NES Altera IC STRATIX IV E 530K 1760-FBGA
MX29GL256EHXFI-90Q Macronix IC FLASH MEM 256MB 90NS 64LFBGA
EP4SE530F43C3ES Altera IC STRATIX IV E 530K 1760-FBGA
EP2SGX90FF1508C5ES Altera IC STRATIX II GX 90K 1508-FBGA
EP2SGX90EF1152C5ES Altera IC STRATIX II GX 90K 1152-FBGA
IDT71256SA25PZGI IDT, Integrated Device Technology Inc IC SRAM 256KBIT 25NS 28TSOP
IDT71256SA20PZGI IDT, Integrated Device Technology Inc IC SRAM 256KBIT 20NS 28TSOP
IDT71256SA12PZGI IDT, Integrated Device Technology Inc IC SRAM 256KBIT 12NS 28TSOP
IDT6116SA25TPGI IDT, Integrated Device Technology Inc IC SRAM 16KBIT 25NS 24DIP
IDT6116LA25SOGI IDT, Integrated Device Technology Inc IC SRAM 16KBIT 25NS 24SOIC
IDT6116LA20SOGI IDT, Integrated Device Technology Inc IC SRAM 16KBIT 20NS 24SOIC
IDT7164S25YGI8 IDT, Integrated Device Technology Inc IC SRAM 64KBIT 25NS 28SOJ
EP2SGX90EF1152C4ES Altera IC STRATIX II GX 90K 1152-FBGA
MT48H8M16LFB4-75 IT:K Micron Technology Inc IC SDRAM 128MBIT 133MHZ 54VFBGA
EP2SGX90EF1152C3ES Altera IC STRATIX II GX 90K 1152-FBGA